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Igbt
EPN Type Device Vces [V] Vces [V] Vce(sat) [V] Vth(V) If@100℃ [A] Vf[V] fmin [KHz] fmax [KHz] Topology Package Technology Qualification Isc [A] tSC [us] Product Status
HCKD5N65AM2 Discretes IGBT + Diode 650 5 1.45 6.35 5 1.75 5 30 Single TO-252 COOLWATTⓐⅡ Industria 48 5 Mass Production
HCKD5N65BM2 Discretes IGBT + Diode 650 5 1.45 6.35 5 1.40 5 30 Single TO-252 COOLWATTⓐⅡ Industria 48 5 Mass Production
HCKW40N65H2 Discretes IGBT + Diode 650 40 1.45 5.65 40 1.60 30 80 Single TO-247 COOLWATTⓐⅡ Industria - - Mass Production
HCKW60N65BH2A Discretes IGBT + Diode 650 60 1.65 6.05 60 1.45 30 80 Single TO-247 COOLWATTⓐⅡ Industria - - Mass Production
HCKW60N65CH2A Discretes IGBT + Diode 650 60 1.80 5.45 30 1.35 30 80 Single TO-247 COOLWATTⓐⅡ Industria - - Mass Production
HCKW75N65BH2 Discretes IGBT + Diode 650 75 1.80 5.6 75 1.70 30 80 Single TO-247 COOLWATTⓐⅡ Industria - - Mass Production
HCKZ75N65BH2 Discretes IGBT + Diode 650 75 1.80 5.6 75 1.70 30 80 Single TO-247-4L COOLWATTⓐⅡ Industria - - Mass Production
HCKW75N65FH2 Discretes IGBT + Diode 650 75 1.80 5.6 75 1.50 30 80 Single TO-247 COOLWATTⓐⅡ Industria - - Mass Production
HCKW75N65GH2 Discretes IGBT + SiC Diode 650 75 1.80 5.7 30 1.42 30 80 Single TO-247 COOLWATTⓐⅡ Industria - - Mass Production
HCKZ75N65GH2 Discretes IGBT + SiC Diode 650 75 1.80 5.7 30 1.42 30 80 Single TO-247-4L COOLWATTⓐⅡ Industria - - Mass Production
HCKW25N120H2 Discretes IGBT + Diode 1200 25 2.05 5.40 15 1.55 20 50 Single TO-247 COOLWATTⓐⅡ Industria - - Mass Production
HCKW40N120H1 Discretes IGBT + Diode 1200 40 1.85 5.60 20 1.65 20 50 Single TO-247 COOLWATTⓐⅠ Industria - - Mass Production
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