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| 参数 | 值 |
| EPN | HCCC120R080H1 |
| Type | SiC MOS |
| BVDSS [V] | 1200.00 |
| VGS[V] | -5.00~20.00 |
| VTH[V] | 1.80~4.50 |
| ID[A] | 37.00 |
| PD(W) | 221.00 |
| RDON Typ *[mohm]@VGS=20V | 80.00 |
| Ciss[pF] | 1255.00 |
| Coss[pF] | 80.00 |
| Crss[pF] | 5.00 |
| Qg(10V)[nC] | 58.00 |
| Package | TO-263 |
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HCCC120R080H1
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