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| MOS class | Battery Cell # | Charge Current (max) | VIN (min) | VIN (max) | MOS | OTG voltage (max) | OTG current (max) | Control Interface | Features | Package |
| HCFF150R12RH1 | Module | IGBT + Diode | 1200 | 150 | 1.75 | 5.35 | 150 | 2.00 | 20 | 50 |
| VSE008N06MS-K | NMOS | NO | 60 | ±20 | 1.2~2.3 | 31 | 42 | 6 | 9.2 | -- |
| VS6412AEL | NMOS | NO | 60 | ±20 | 1.2~2.5 | 33 | 32 | 15 | 17 | -- |
| VS6613GE | NMOS | NO | 60 | ±20 | 1.3~2.4 | 46 | 31 | 8.3 | 14 | -- |
| VSE011N06MS | NMOS | NO | 60 | ±20 | 1.3~2.5 | 50 | 42 | 9 | 11 | -- |
| VSE007N06HS-G | NMOS | NO | 60 | ±20 | 2.6~3.7 | 68 | 42 | 5.5 | -- | -- |
| VSE009NE6MS-G | NMOS | NO | 60 | ±20 | 1.5~2.5 | 50 | 33 | 7 | 12 | -- |
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深圳市龙华新区梅龙路与东环一路交汇处泽华大厦1213-1216室
