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| 参数 | 值 |
| EPN | HCKZ75N65GH2 |
| Type | IGBT + SiC Diode |
| BV [V] | 650 |
| IC@25°[A] | - |
| IC@100°[A] | 75 |
| VCE(sat) [V] | 1.80 |
| Vth(V) | 5.70 |
| IF@25℃ [A] | 30 |
| IF@100℃ [A] | 30 |
| VF [V] | 1.42 |
| fmin [kHz] | 30 |
| fmax [kHz] | 80 |
| Package | TO-247-4L |
| Technology | COOLWATTⓐⅡ |
| Qualification | Industria |
| Isc [A] | - |
| tsc [us] | - |
HCKZ75N65GH2
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深圳市龙华新区梅龙路与东环一路交汇处泽华大厦1213-1216室
